IC FLASH 1MBIT SPI/DUAL 8SOP
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Memory Size | Memory Interface | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Format | Mounting Type | Memory Type | Access Time | Technology | Memory Organization | Supplier Device Package | Clock Frequency | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25D10CTEGR | 8-SOIC | 3.9 mm | 0.154 in | 1 Mbit | SPI - Dual I/O | 4 ms | 80 µs | FLASH | Surface Mount | Non-Volatile | 6 ns | FLASH - NOR (SLC) | 128K x 8 | 8-SOP | 100 MHz | 2.7 V | 3.6 V | -40 °C | 125 °C |
GigaDevice Semiconductor (HK) Limited GD25D10CTIG | 8-SOIC | 3.9 mm | 0.154 in | 1 Mbit | SPI - Dual I/O | 4 ms | 50 µs | FLASH | Surface Mount | Non-Volatile | FLASH - NOR | 128K x 8 | 8-SOP | 100 MHz | 2.7 V | 3.6 V | -40 °C | 85 °C | |
GigaDevice Semiconductor (HK) Limited GD25D10CEIGR | 8-XFDFN Exposed Pad | 1 Mbit | SPI - Dual I/O | 4 ms | 50 µs | FLASH | Surface Mount | Non-Volatile | FLASH - NOR | 128K x 8 | 8-USON (2x3) | 100 MHz | 2.7 V | 3.6 V | -40 °C | 85 °C | |||
GigaDevice Semiconductor (HK) Limited GD25D10CKIGR | 8-XFDFN Exposed Pad | 1 Mbit | SPI - Dual I/O | 4 ms | 50 µs | FLASH | Surface Mount | Non-Volatile | FLASH - NOR | 128K x 8 | 8-USON (1.5x1.5) | 100 MHz | 2.7 V | 3.6 V | -40 °C | 85 °C |