MBRT500 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 100V 250A 3TOWER
| Part | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Package Name | Current - Reverse Leakage | Voltage - DC Reverse (Vr) (Max) | Technology | Diode Pair Count | Diode Configuration | Mounting Type | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package / Case | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 °C | -55 °C | 880 mV | Three Tower | 1 mA | 100 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 880 mV | Three Tower | 1 mA | 150 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 880 mV | Three Tower | 1 mA | 80 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 750 mV | Three Tower | 1 mA | 35 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 750 mV | Three Tower | 1 mA | 20 V | Schottky | 1 pair | Common Cathode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 750 mV | Three Tower | 1 mA | 45 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 880 mV | Three Tower | 1 mA | 100 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 920 mV | Three Tower | 1 mA | 200 V | Schottky | 1 pair | Common Cathode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 750 mV | Three Tower | 1 mA | 30 V | Schottky | 1 pair | Common Cathode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |
GeneSiC Semiconductor | 150 °C | -55 °C | 750 mV | Three Tower | 1 mA | 20 V | Schottky | 1 pair | Common Anode | Chassis Mount | 500 ns | 200 mA | Three Tower | 250 A |