DIODE GEN PURP 200V 3A DO201AD
| Part | Mounting Type | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If [Max] | Grade | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Speed | Qualification | Package / Case | Supplier Device Package | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Through Hole | 35 ns | 950 mV | Automotive | 150 °C | -55 °C | 5 µA | 200 mA 500 ns | AEC-Q101 | DO-201AD Axial | DO-201AD | Standard | 200 V | 80 pF | 3 A |
Taiwan Semiconductor Corporation | Through Hole | 35 ns | 950 mV | 150 °C | -55 °C | 5 µA | 200 mA 500 ns | DO-201AD Axial | DO-201AD | Standard | 200 V | 80 pF | 3 A | ||
Taiwan Semiconductor Corporation | Through Hole | 35 ns | 950 mV | 150 °C | -55 °C | 5 µA | 200 mA 500 ns | DO-201AD Axial | DO-201AD | Standard | 200 V | 80 pF | 3 A |