MOSFET P-CH 30V TO252
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | 13 A | 4 W 70 W | 20 V | -55 °C | 150 °C | Surface Mount | P-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA | 15 mOhm | 4.5 V 10 V | 125 nC | 3200 pF | 1 V | MOSFET (Metal Oxide) | ||
Vishay General Semiconductor - Diodes Division | 40 V | 36 A | 2.1 W 41.7 W | 20 V | -55 °C | 150 °C | Surface Mount | P-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA | 4.5 V 10 V | 2.5 V | MOSFET (Metal Oxide) | 2765 pF | 100 nC |