2N3250A-Transistor Series

MIL-PRF-19500/323

Catalog

MIL-PRF-19500/323

Part	DC Current Gain (hFE) (Min)	Transistor Type	Vce Saturation (Max)	Power - Max	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max)	Package Name	Current - Collector Cutoff (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Microchip Technology 2N3250A	50	PNP	500 mV	360 mW	60 V	Through Hole	0.2 mA	TO-39 (TO-205AD)	10 µA	-65 °C	200 °C	TO-205AD TO-39-3 Metal Can

Catalog

MIL-PRF-19500/323

Description

This specification covers the performance requirements for PNP silicon switching 2N3250A and 2N3251A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/323 and two levels of product assurance (JANHC, JANKC) are provided for the unencapulated die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-18 and UB, surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/323.