MOSFET N-CH 80V 120A TO263
| Part | FET Type | Package / Case | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM60030E-GE3 | N-Channel | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | Surface Mount | MOSFET (Metal Oxide) | 80 V | 375 W | 120 A | 141 nC | 3.2 mOhm | 20 V | 4 V | 10 V | 7.5 V | -55 °C | 175 ░C | TO-263 (D2PAK) | 7910 pF |