MOSFET N-CH 80V 120A TO263
| Part | FET Type | Package / Case | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | N-Channel  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | Surface Mount  | MOSFET (Metal Oxide)  | 80 V  | 375 W  | 120 A  | 141 nC  | 3.2 mOhm  | 20 V  | 4 V  | 10 V  | 7.5 V  | -55 °C  | 175 ░C  | TO-263 (D2PAK)  | 7910 pF  |