MOSFET N-CH 100V 65A D2PAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 5800 pF | 65 A | N-Channel | 19.5 mOhm | 20 V | 10 V | 100 V | Surface Mount | MOSFET (Metal Oxide) | 4 V | TO-263 (D2PAK) | 85 nC | -55 °C | 175 ░C | 150 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | ||
STMicroelectronics | 2200 pF | 60 A | N-Channel | 9.5 mOhm | 20 V | 30 V | Surface Mount | MOSFET (Metal Oxide) | 1 V | D2PAK | -55 °C | 175 ░C | 858 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 5 V |