MSC025SMA330 Series

3300V, 25 mOhm, Discrete mSiC™ MOSFET

Catalog

3300V, 25 mOhm, Discrete mSiC™ MOSFET

Part	Input Capacitance (Ciss) (Max)	FET Type	Package Name	Gate Charge (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) Negative	Vgs (Max) Positive	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Microchip Technology MSC025SMA330D/S
Microchip Technology MSC025SMA330B4	8720 pF	N-Channel	TO-247-4	410 nC	31 mOhm	20 V	-10 V	23 V	3300 V	SiCFET (Silicon Carbide)	Through Hole	2.7 V	104 A	-55 °C	150 °C	TO-247-4

Catalog

3300V, 25 mOhm, Discrete mSiC™ MOSFET

Description

MSC025SMA330 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.