IR21363 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 28SOIC

Part	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Package Name	Driven Configuration	Gate Channel	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	High Side Voltage - Max (Bootstrap)	Package Width	Package Length	Channel Type	Logic Voltage - VIL	Logic Voltage - VIH	Mounting Type	Package Leads
INFINEON IR21363SPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	N-Channel	IGBT MOSFET	-40 °C	150 °C	6	600 V	7.5 mm	0.295 in	3-Phase	0.8 V	3 V	Surface Mount
INFINEON IR21363JPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	32 Leads 44-LCC (J-Lead)	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	6	600 V	16.58 mm	16.58 mm	3-Phase	0.8 V	3 V	Surface Mount	32 Leads
INFINEON IR21363JTRPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	32 Leads 44-LCC (J-Lead)	Half-Bridge	N-Channel	IGBT MOSFET	-40 °C	150 °C	6	600 V	16.58 mm	16.58 mm	3-Phase	0.8 V	3 V	Surface Mount	32 Leads
INFINEON IR21363SPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	6	600 V	7.5 mm	0.295 in	3-Phase	0.8 V	3 V	Surface Mount
INFINEON IR21363JTRPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	32 Leads 44-LCC (J-Lead)	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	6	600 V	16.58 mm	16.58 mm	3-Phase	0.8 V	3 V	Surface Mount	32 Leads
INFINEON IR21363STRPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	6	600 V	7.5 mm	0.295 in	3-Phase	0.8 V	3 V	Surface Mount
INFINEON IR21363STRPBF	50 ns	125 ns	200 mA	0.35 A	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	N-Channel	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	6	600 V	7.5 mm	0.295 in	3-Phase	0.8 V	3 V	Surface Mount