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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Qualification | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | FET Type | Technology | Package / Case | Rds On (Max) | Vgs (Max) | Gate Charge (Max) | Mounting Type | Vgs(th) (Max) | Grade | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | 2.2 A | 7.5 W 615 mW | 10 V | 4.5 V | 196 pF | N-Channel | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 117 mOhm | 20 V | 6 nC | Surface Mount | 2.7 V | Automotive | 60 V | -55 °C | 175 °C | TO-236AB |