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70 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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70 V, P-channel Trench MOSFET
70 V, P-channel Trench MOSFET
| Part | FET Type | Technology | Package Name | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Package / Case | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | MOSFET (Metal Oxide) | SOT-223 | 70 V | 822 pF | 800 mW | 167 mOhm | 2.4 A | TO-261-4 TO-261AA | 15.9 nC | -55 °C | 150 °C | 20 V | 10 V | 4.5 V | 3 V | Surface Mount |