IRF6662 Series
Manufacturer: INFINEON
IR MOSFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 22 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) | Technology | Gate Charge (Max) | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Package Name | Vgs(th) (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 10 V | 100 V | 20 V | 22 mOhm | MOSFET (Metal Oxide) | 31 nC | Surface Mount | DirectFET™ Isometric MZ | 1360 pF | 8.3 A 8.3 A | 47 A | DIRECTFET™ MZ | 4.9 V | N-Channel | -40 °C | 150 °C | 2.8 W 89 W |
INFINEON | 10 V | 100 V | 20 V | 22 mOhm | MOSFET (Metal Oxide) | 31 nC | Surface Mount | DirectFET™ Isometric MZ | 1360 pF | 8.3 A 8.3 A | 47 A | DIRECTFET™ MZ | 4.9 V | N-Channel | -40 °C | 150 °C | 2.8 W 89 W |