TLP183 Series
Manufacturer: Toshiba Semiconductor and Storage
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ISOLATORS AND SOLID STATE RELAYS FOR ENHANCED SAFETY AND EFFICIENCY | TOSHIBA, PHOTOCOUPLER (PHOTOTRANSISTOR OUTPUT), DC INPUT, 3750 VRMS, 4PIN SO6
| Part | Mounting Type | Vce Saturation (Max) | Current Transfer Ratio (Min) | Voltage - Isolation | Turn On Time (Typ) | Turn Off Time (Typ) | Current Transfer Ratio (Max) | Current - Output / Channel | Current - DC Forward (If) (Max) | Rise Time (Typ) | Fall Time (Typ) | Voltage - Output (Max) | Number of Channels | Output Type | Package Name | Package Width | Package Features | Package Length | Operating Temperature (Max) | Operating Temperature (Min) | Voltage - Forward (Vf) (Typ) | Input Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 100 % | 3750 VDC | 3 µs | 3 µs | 300 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 50 % | 3750 VDC | 3 µs | 3 µs | 150 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 200 % | 3750 VDC | 3 µs | 3 µs | 600 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 75 % | 3750 VDC | 3 µs | 3 µs | 150 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 100 % | 3750 VDC | 3 µs | 3 µs | 600 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
 Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 100 % | 3750 VDC | 3 µs | 3 µs | 200 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 50 % | 3750 VDC | 3 µs | 3 µs | 600 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
 Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 200 % | 3750 VDC | 3 µs | 3 µs | 400 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |
Toshiba Semiconductor and Storage | Surface Mount | 300 mV | 150 % | 3750 VDC | 3 µs | 3 µs | 300 % | 50 mA | 50 mA | 2 µs | 3 µs | 80 V | 1 | Transistor | 6-SOIC 6-SOP | 4.4 mm | 4 Leads | 0.173 in | 125 °C | -55 °C | 1.25 V | DC |