High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.65 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.65 Ω@10V, TO-220SIS, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.65 Ω@10V, TO-220SIS, DTMOSⅣ
| Part | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) | Package / Case | Vgs (Max) | Operating Temperature | Vgs(th) (Max) | Mounting Type | Rds On (Max) | Package Name | Gate Charge (Max) | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 650 V | N-Channel | 570 pF | TO-220-3 Full Pack | 30 V | 150 °C | 3.5 V | Through Hole | 650 mOhm | TO-220SIS | 16 nC | 30 W | MOSFET (Metal Oxide) | 7.8 A | 10 V |