60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Rds On (Max) | Channel Count | Configuration | Configuration - Features | Technology | Qualification | Package / Case | Grade | Input Capacitance (Ciss) (Max) | Package Name | Power - Max (Tc) | Power - Max (Ta) | Gate Charge (Max) | Mounting Type | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.9 Ohm | 2 | N-Channel | Dual | MOSFET (Metal Oxide) | AEC-Q101 | 6-XFDFN Exposed Pad | Automotive | 9.2 pF | DFN1412-6 | 5 W | 420 mW | 315 pC | Surface Mount | 2.6 V | 60 V | -55 °C | 150 °C | 320 mA |