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20 V, single P-channel Trench MOSFET
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | FET Type | Package / Case | Input Capacitance (Ciss) (Max) | Vgs (Max) | Package Name | Power Dissipation (Max) | Gate Charge (Max) | Technology | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | 3-XFDFN | 87 pF | 8 V | DFN1006B-3 | 2.7 W 360 mW | 1.14 nC | MOSFET (Metal Oxide) | 1.3 V | -55 °C | 150 °C | 20 V | 850 mOhm | 680 mA | Surface Mount | 4.5 V | 1.8 V |