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MOSFET N-CH 550V 12A TO220SIS
| Part | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | MOSFET (Metal Oxide) | 10 V | TO-220SIS | 570 mOhm | 1550 pF | 550 V | 45 W | 150 °C | TO-220-3 Full Pack | 28 nC | 30 V | 12 A | Through Hole |