Beta
⌘K
MOSFET P-CH 60V 60A DPAK
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Supplier Device Package | Vgs (Max) [Min] | Vgs (Max) [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Package / Case | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 11.2 mOhm | 7760 pF | Surface Mount | 156 nC | 100 W | DPAK+ | -20 V | 10 V | P-Channel | 60 A | 3 V | 6 V 10 V | 175 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | MOSFET (Metal Oxide) |