YQ15RSM10SDTF Series

Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD for Automotive

Catalog

Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD for Automotive

Part	Mounting Type	Operating Temperature - Junction	Grade	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Technology
Rohm Semiconductor YQ15RSM10SDTFTL1	Surface Mount	175 °C	Automotive	200 mA, 500 ns	100 µA	100 V	AEC-Q101	3-PowerDFN, TO-277	TO-277A	15 A	Schottky

Catalog

Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD for Automotive

Key Features

• High reliability, Power mold type, Low VFand low IR, Low capacitance

Description

The YQ15RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.