Dual N-channel TrenchMOS logic level FET
Dual N-channel TrenchMOS logic level FET
| Part | Input Capacitance (Ciss) (Max) | Qualification | Package / Case | Rds On (Max) | Package Name | Power - Max | Gate Charge (Max) | Vgs(th) (Max) | Channel Count | Configuration | Configuration - Features | Technology | Mounting Type | Drain to Source Voltage (Vdss) | FET Feature | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3000 pF | AEC-Q100 | 8-LFPAK56 SOT-1205 | 6.1 mOhm | LFPAK56D | 64 VA | 22.2 nC | 2.1 V | 2 | N-Channel | Dual | MOSFET (Metal Oxide) | Surface Mount | 40 V | Logic Level Gate | -55 °C | 175 °C | 40 A | Automotive |
 Nexperia USA Inc. | 3281 pF | AEC-Q101 | 8-LFPAK56 SOT-1205 | 6 mOhm 6 mOhm | LFPAK56D | 68 VA | 35.4 nC | 2.1 V | 2 | N-Channel | Dual | MOSFET (Metal Oxide) | Surface Mount | 40 V | Logic Level Gate | -55 °C | 175 °C | 40 A | Automotive |