IPI70N Series

Catalog

MOSFET N-CHANNEL_100+

Part	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPI70N12S311AKSA1	120 V	N-Channel	65 nC	11.6 mOhm	Through Hole	125 W	-55 °C	175 ░C	4 V	70 A	I2PAK TO-262-3 Long Leads TO-262AA	20 V	MOSFET (Metal Oxide)	10 V	AEC-Q101	4355 pF	Automotive
Infineon Technologies IPI70N10S312AKSA1	100 V	N-Channel		11.6 mOhm	Through Hole	125 W	-55 °C	175 ░C	4 V	70 A	I2PAK TO-262-3 Long Leads TO-262AA	20 V	MOSFET (Metal Oxide)	10 V		4355 pF		66 nC	PG-TO262-3
Infineon Technologies IPI70N04S307AKSA1	40 V	N-Channel	40 nC		Through Hole	79 W	-55 °C	175 ░C	4 V		I2PAK TO-262-3 Long Leads TO-262AA	20 V	MOSFET (Metal Oxide)	10 V	AEC-Q101		Automotive		PG-TO262-3	6.5 mOhm
Infineon Technologies IPI70N10S3L12AKSA1	100 V	N-Channel			Through Hole	125 W	-55 °C	175 ░C	2.4 V	70 A	I2PAK TO-262-3 Long Leads TO-262AA	20 V	MOSFET (Metal Oxide)	4.5 V 10 V		5550 pF		80 nC	PG-TO262-3	12.1 mOhm
Infineon Technologies IPI70N12S3L12AKSA1	120 V	N-Channel	77 nC		Through Hole	125 W	-55 °C	175 ░C	2.4 V	70 A	I2PAK TO-262-3 Long Leads TO-262AA	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	AEC-Q101	5550 pF	Automotive			12.1 mOhm