SST39VF800 Series

Catalog

IC FLASH 8MBIT PARALLEL 48TFBGA

Part	Access Time	Memory Interface	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Package / Case	Technology	Memory Size	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Memory Type	Package / Case [y]	Package / Case [y]
Microchip Technology SST39VF800A-90-4I-B3KE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-TFBGA	FLASH	1024 KB	48-TFBGA	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4I-M1QE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-WFBGA	FLASH	1024 KB	48-WFBGA (6x4)	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4I-EKE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-TFSOP	FLASH	1024 KB	48-TSOP	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile	18.4 mm	0.724 in
Microchip Technology SST39VF800A-70-4I-MAQE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-WFBGA	FLASH	1024 KB	48-WFBGA (6x4)	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4C-EKE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-TFSOP	FLASH	1024 KB	48-TSOP	2.7 V	3.6 V	70 °C	0 °C	FLASH	Non-Volatile	18.4 mm	0.724 in
Microchip Technology SST39VF800A-70-4I-B3KE	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-TFBGA	FLASH	1024 KB	48-TFBGA	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4C-MAQE-T	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-WFBGA	FLASH	1024 KB	48-WFBGA (6x4)	2.7 V	3.6 V	70 °C	0 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4C-M1QE-T	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-WFBGA	FLASH	1024 KB	48-WFBGA (6x4)	2.7 V	3.6 V	70 °C	0 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4I-B3KE-T	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount	48-TFBGA	FLASH	1024 KB	48-TFBGA	2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile
Microchip Technology SST39VF800A-70-4I-V-CZ132	70 ns	Parallel	512 K	20 µs	20 µs	Surface Mount		FLASH	1024 KB		2.7 V	3.6 V	85 °C	-40 °C	FLASH	Non-Volatile

Catalog

Key Features

• + Organized as 512K x16

• + Single Voltage Read and Write Operations– 2.7-3.6V for SST39VF200A/400A/800A

• + Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• + Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)

• + Sector-Erase Capability– Uniform 2 KWord sectors

• + Block-Erase Capability– Uniform 32 KWord blocks

• + Fast Read Access Time– 70 ns for SST39VF800A

• + Latched Address and Data

• + Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39VF800A

• + Automatic Write Timing– Internal VPP Generation

• + End-of-Write Detection– Toggle Bit– Data# Polling

• + CMOS I/O Compatibility

• + JEDEC Standard– Flash EEPROM Pinouts and command sets

• + Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit

• + All non-Pb (lead-free) devices are RoHS compliant

Description

**\*Not Recommended For New Design\*** The SST39VF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.