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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; I2PAK TO-262 PACKAGE; 4.5 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 117 nC | 100 A | MOSFET (Metal Oxide) | 20 V | Through Hole | 100 V | N-Channel | -55 °C | 175 ░C | PG-TO262-3 | 6 V 10 V | 3.5 V | 4.5 mOhm | I2PAK TO-262-3 Long Leads TO-262AA | 214 W |