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MOSFET N-CH 100V 35A TO252-3
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 71 W | 31 nC | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 35 A | PG-TO252-3 | -55 °C | 175 ░C | 25 mOhm | MOSFET (Metal Oxide) | 20 V | Surface Mount | 100 V | 10 V | 2070 pF | 4 V |