MOSFET N-CH 20V 4A 6DFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Vgs (Max) | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | 4 A | 1.5 V 4.5 V | Surface Mount | 6-DFN (1.6x1.6) | MOSFET (Metal Oxide) | 748 pF | 1.1 V | 8 V | 1.8 W | N-Channel | 20 V | 14 nC | 29 mOhm | 6-PowerUFDFN | ||
Alpha & Omega Semiconductor Inc. | -55 °C | 150 °C | 4 A | 1.5 V 4.5 V | Surface Mount | 6-DFN (1.6x1.6) | MOSFET (Metal Oxide) | 1 V | 8 V | 1.8 W | N-Channel | 12 V | 12 nC | 6-PowerUFDFN | 22 mOhm | 770 pF |