
FREDFET-200V Series
Manufacturer: Microchip Technology
FREDFET MOS7 200 V 11 MOHM SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES
| Part | Package Name | Package / Case | Mounting Type | Rds On (Max) | Technology | Gate Charge (Max) | Vgs(th) (Max) | Current - Continuous Drain (Id) (Tc) | FET Type | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | ISOTOP® | miniBLOC SOT-227-4 | Chassis Mount | 11 mOhm | MOSFET (Metal Oxide) | 180 nC | 5 V | 176 A | N-Channel | 10320 pF | 200 V | |||||
Microchip Technology | ISOTOP® | miniBLOC SOT-227-4 | Chassis Mount | 20 mOhm | MOSFET (Metal Oxide) | 110 nC | 5 V | 104 A | N-Channel | 6850 pF | 200 V | |||||
Microchip Technology | D3PAK | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | Surface Mount | 45 mOhm | MOSFET (Metal Oxide) | 195 nC | 4 V | 56 A | N-Channel | 4860 pF | 200 V | |||||
Microchip Technology | TO-264 [L] | TO-264-3 TO-264AA | Through Hole | 18 mOhm | MOSFET (Metal Oxide) | 330 nC | 4 V | 100 A | N-Channel | 9880 pF | 200 V | |||||
Microchip Technology | TO-264 [L] | TO-264-3 TO-264AA | Through Hole | 20 mOhm | MOSFET (Metal Oxide) | 110 nC | 5 V | 100 A | N-Channel | 6850 pF | 200 V | |||||
Microchip Technology | TO-264 [L] | TO-264-3 TO-264AA | Through Hole | 22 mOhm | MOSFET (Metal Oxide) | 435 nC | 4 V | 100 A | N-Channel | 10200 pF | 200 V | -55 °C | 150 °C | 30 V | 10 V | 520 W |
Microchip Technology | T-MAX™ [B2] | TO-247-3 Variant | Through Hole | 18 mOhm | MOSFET (Metal Oxide) | 330 nC | 4 V | 100 A | N-Channel | 9880 pF | 200 V | |||||
Microchip Technology | TO-247 [B] | TO-247-3 | Through Hole | 45 mOhm | MOSFET (Metal Oxide) | 195 nC | 4 V | 56 A | N-Channel | 4860 pF | 200 V | -55 °C | 150 °C | 30 V | 10 V | 300 W |
Microchip Technology | ISOTOP® | miniBLOC SOT-227-4 | Chassis Mount | 11 mOhm | MOSFET (Metal Oxide) | 180 nC | 4 V | 175 A | N-Channel | 21600 pF | 200 V | -55 °C | 150 °C | 30 V | 10 V | 700 W |
Microchip Technology | T-MAX™ [B2] | TO-247-3 Variant | Through Hole | 20 mOhm | MOSFET (Metal Oxide) | 110 nC | 5 V | 100 A | N-Channel | 6850 pF | 200 V |