VO618 Series
Manufacturer: Vishay Semiconductor Opto Division
OPTOISOLATOR 5.3KV TRANS 4-DIP
| Part | Package Name | Operating Temperature (Max) | Operating Temperature (Min) | Input Type | Current - Output / Channel | Current Transfer Ratio (Max) | Current Transfer Ratio (Min) | Voltage - Forward (Vf) (Typ) | Rise Time (Typ) | Fall Time (Typ) | Vce Saturation (Max) | Turn On Time (Typ) | Turn Off Time (Typ) | Voltage - Output (Max) | Mounting Type | Package Width | Package Length | Number of Channels | Current - DC Forward (If) (Max) | Voltage - Isolation | Output Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Opto Division | 4-DIP | 110 °C | -55 °C | DC | 50 mA | 125 % | 63 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Through Hole | 7.62 mm | 0.3 in | 1 | 60 mA | 5.3 kV | Transistor | |
Vishay Semiconductor Opto Division | 4-SMD | 110 °C | -55 °C | DC | 50 mA | 200 % | 100 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Surface Mount | 1 | 60 mA | 5.3 kV | Transistor | 4-SMD Gull Wing | ||
Vishay Semiconductor Opto Division | 4-SMD | 110 °C | -55 °C | DC | 50 mA | 320 % | 160 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Surface Mount | 1 | 60 mA | 5.3 kV | Transistor | 4-SMD Gull Wing | ||
Vishay Semiconductor Opto Division | 4-DIP | 110 °C | -55 °C | DC | 50 mA | 320 % | 160 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Through Hole | 7.62 mm | 0.3 in | 1 | 60 mA | 5.3 kV | Transistor | |
Vishay Semiconductor Opto Division | 4-DIP | 110 °C | -55 °C | DC | 50 mA | 320 % | 160 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Through Hole | 10.16 mm | 10.16 mm | 1 | 60 mA | 5.3 kV | Transistor | |
Vishay Semiconductor Opto Division | 4-DIP | 110 °C | -55 °C | DC | 50 mA | 600 % | 50 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Through Hole | 7.62 mm | 0.3 in | 1 | 60 mA | 5.3 kV | Transistor | |
Vishay Semiconductor Opto Division | 4-DIP | 110 °C | -55 °C | DC | 50 mA | 200 % | 100 % | 1.1 V | 2 µs | 2 µs | 400 mV | 3 µs | 2.3 µs | 80 V | Through Hole | 7.62 mm | 0.3 in | 1 | 60 mA | 5.3 kV | Transistor |