VO617 Series
Manufacturer: Vishay Semiconductor Opto Division
OPTOISOLATOR 5.3KV TRANS 4-SMD
| Part | Turn On Time (Typ) | Turn Off Time (Typ) | Voltage - Forward (Vf) (Typ) | Package Name | Mounting Type | Package / Case | Output Type | Rise Time (Typ) | Fall Time (Typ) | Current Transfer Ratio (Min) | Operating Temperature (Max) | Operating Temperature (Min) | Input Type | Current Transfer Ratio (Max) | Current - DC Forward (If) (Max) | Current - Output / Channel | Voltage - Output (Max) | Number of Channels | Vce Saturation (Max) | Voltage - Isolation | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-SMD | Surface Mount | 4-SMD Gull Wing | Transistor | 2 µs | 2 µs | 160 % | 110 °C | -55 °C | DC | 320 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | ||
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-SMD | Surface Mount | 4-SMD Gull Wing | Transistor | 2 µs | 2 µs | 160 % | 110 °C | -55 °C | DC | 320 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | ||
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-DIP | Through Hole | Transistor | 2 µs | 2 µs | 130 % | 110 °C | -55 °C | DC | 260 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | 7.62 mm | 0.3 in | |
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-DIP | Through Hole | Transistor | 2 µs | 2 µs | 100 % | 110 °C | -55 °C | DC | 200 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | 7.62 mm | 0.3 in | |
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-SMD | Surface Mount | 4-SMD Gull Wing | Transistor | 2 µs | 2 µs | 80 % | 110 °C | -55 °C | DC | 160 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | ||
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-DIP | Through Hole | Transistor | 2 µs | 2 µs | 100 % | 110 °C | -55 °C | DC | 200 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | 10.16 mm | 10.16 mm | |
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-SMD | Surface Mount | 4-SMD Gull Wing | Transistor | 2 µs | 2 µs | 100 % | 110 °C | -55 °C | DC | 200 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | ||
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-DIP | Through Hole | Transistor | 2 µs | 2 µs | 100 % | 110 °C | -55 °C | DC | 200 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | 10.16 mm | 10.16 mm | |
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-SMD | Surface Mount | 4-SMD Gull Wing | Transistor | 2 µs | 2 µs | 100 % | 110 °C | -55 °C | DC | 200 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | ||
Vishay Semiconductor Opto Division | 3 µs | 2.3 µs | 1.35 V | 4-DIP | Through Hole | Transistor | 2 µs | 2 µs | 160 % | 110 °C | -55 °C | DC | 320 % | 60 mA | 50 mA | 80 V | 1 | 400 mV | 5.3 kV | 10.16 mm | 10.16 mm |