DMTH43M8LFVW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type
Diodes Inc DMTH43M8LFVW-13	36.9 nC	2.5 V	40 V	Surface Mount Wettable Flank	3.6 W 65 W	23 A 96 A	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	4.3 mOhm	4.5 V 10 V	PowerDI3333-8 (SWP) Type UX	2737 pF	8-PowerVDFN	N-Channel

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Excellent Qgdx RDS(ON)Product (FOM)

• Wettable Flank for Improved Optical Inspection

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.