IR21084 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 14SOIC
| Part | Input Type | Current - Peak Output (Source) | Current - Peak Output (Sink) | Operating Temperature (Min) | Operating Temperature (Max) | Package Width | Package Name | Package Length | Driven Configuration | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | High Side Voltage - Max (Bootstrap) | Channel Type | Number of Drivers | Mounting Type | Logic Voltage - VIL | Logic Voltage - VIH | Gate Channel | Gate Type | Fall Time (Typ) | Rise Time (Typ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 3.9 mm | 14-SOIC | 0.154 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Surface Mount | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 3.9 mm | 14-SOIC | 0.154 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Surface Mount | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 7.62 mm | 14-DIP | 0.3 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Through Hole | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 7.62 mm | 14-DIP | 0.3 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Through Hole | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 3.9 mm | 14-SOIC | 0.154 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Surface Mount | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |
INFINEON | Non-Inverting | 200 mA | 0.35 A | -40 °C | 150 °C | 3.9 mm | 14-SOIC | 0.154 in | Half-Bridge | 10 VDC | 20 V | 600 V | Independent | 2 | Surface Mount | 0.8 V | 2.9 V | N-Channel | IGBT MOSFET N-Channel MOSFET | 50 ns | 150 ns |