Catalog
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
Description
AI
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Beta
⌘K
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
| Part | Current - Continuous Drain (Id) (Tc) | Vgs (Max) Negative | Vgs (Max) Positive | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) | Package Name | Mounting Type | Vgs(th) (Max) | Rds On (Max) | Operating Temperature | Technology | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 40 A | -6 V | 22 V | 262 W | 18 V | TO-247-3 | 2080 pF | TO-247N | Through Hole | 4 V | 117 mOhm | 175 °C | SiCFET (Silicon Carbide) | N-Channel | 1200 V |