Beta
⌘K
NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
| Part | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Transistor Type | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Frequency - Transition | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 300 mV | Surface Mount | 100 mW | 500 nA | SOT-553 | 70 | 22 kOhms | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100 mA | 47 kOhms | 250 MHz | ESV | 50 V |