GP3T Series
Manufacturer: SemiQ
Beta
⌘K
SIC MOSFETS GEN3 1200V, 80MOHM SIC MOSFET, TO-247-4L
| Part | Technology | Rds On (Max) | Vgs(th) (Max) | Package Name | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) | Vgs (Max) Negative | Vgs (Max) Positive | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 SemiQ | SiCFET (Silicon Carbide) | 100 mOhm | 4 V | TO-247-4 | 147 W | Through Hole | 1351 pF | -8 V | 22 V | N-Channel | TO-247-4 | 1200 V | -55 °C | 175 °C | 32 A | 18 V | 53 nC |