Catalog
60 V, single N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, single N-channel Trench MOSFET
60 V, single N-channel Trench MOSFET
| Part | Rds On (Max) | FET Type | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Package / Case | Gate Charge (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3.5 Ohm | N-Channel | 1.5 V | 20.2 pF | Surface Mount | TO-236AB | 10 V | 2.5 V | MOSFET (Metal Oxide) | 20 V | 265 mA | -55 °C | 150 °C | 310 mW | SC-59 SOT-23-3 TO-236-3 | 0.49 nC | 60 V |