SSM3J114 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM
| Part | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Package Name | Vgs (Max) | Gate Charge (Max) | Power Dissipation (Max) | Vgs(th) (Max) | FET Type | Current - Continuous Drain (Id) (Ta) | Operating Temperature | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Package / Case | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 331 pF | 1.5 V | 4 V | UFM | 8 V | 7.7 nC | 500 mW | 1 V | P-Channel | 1.8 A | 150 °C | 20 V | Surface Mount | MOSFET (Metal Oxide) | 3-SMD Flat Leads | 149 mOhm 149 mOhm |