SSM5H12 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 30V 1.9A UFV
| Part | Package Leads | Package Name | Gate Charge (Max) | FET Type | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Vgs(th) (Max) | Mounting Type | Rds On (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Operating Temperature | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 5 Leads | 6-SMD UFV | 1.9 nC | N-Channel | 12 V | 1.9 A | MOSFET (Metal Oxide) | 1 V | Surface Mount | 133 mOhm | 30 V | 1.8 V | 4 V | 123 pF | 500 mW | 150 °C | Schottky Diode (Isolated) |