STD3NM60N Series

N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package

Catalog

N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
STMicroelectronics STD3NM60N	10 V	N-Channel	600 V	25 V	50 W	3.3 A	4 V	1.8 Ohm	188 pF	9.5 nC	Surface Mount	MOSFET (Metal Oxide)	DPAK	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.