MOSFET TRANSISTOR, N CHANNEL, 130 A, 40 V, 6.5 MOHM, 10 V, 1 V ROHS COMPLIANT: YES
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 130 A | TO-220-3 | 200 W | 6.5 mOhm | 4.5 V 10 V | 40 V | MOSFET (Metal Oxide) | Through Hole | 1 V | 5330 pF | N-Channel | TO-220AB | 100 nC | 16 V |
Infineon Technologies | -55 °C | 175 ░C | 130 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.8 W 200 W | 6.5 mOhm | 4.5 V 10 V | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1 V | 5330 pF | N-Channel | D2PAK | 100 nC | 16 V |
Infineon Technologies | -55 °C | 175 ░C | 130 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.8 W 200 W | 6.5 mOhm | 4.5 V 10 V | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1 V | 5330 pF | N-Channel | D2PAK | 100 nC | 16 V |
Infineon Technologies | -55 °C | 175 ░C | 130 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.8 W 200 W | 6.5 mOhm | 4.5 V 10 V | 40 V | MOSFET (Metal Oxide) | Surface Mount | 1 V | 5330 pF | N-Channel | D2PAK | 100 nC | 16 V |