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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | FET Type | Grade | Gate Charge (Max) | Mounting Type | Vgs(th) (Max) | Qualification | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Rds On (Max) | Package Name | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | Automotive | 19 nC | Surface Mount | 2.7 V | AEC-Q101 | MOSFET (Metal Oxide) | -55 °C | 175 °C | 19 A | 8 A | 20 V | 582 pF | 6-UDFN Exposed Pad | 20 mOhm | DFN2020MD-6 | 2.3 W 15 W | 40 V | 10 V | 4.5 V |