Beta
⌘K
IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 300 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 300 mOhm | TO-220AB | 82 W | Through Hole | 200 V | N-Channel | MOSFET (Metal Oxide) | 575 pF | -55 °C | 175 ░C | 4 V | 35 nC | TO-220-3 | 9.3 A | 20 V |