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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Rds On (Max) | FET Type | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 900 mV | 12 V | 354 pF | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 30 V | MOSFET (Metal Oxide) | 2.1 W 340 mW | 140 mOhm | P-Channel | TO-236AB | 4.5 V | 1.8 V | Surface Mount | 1.5 A | 6.4 nC |