Catalog
100 V, 2 A PNP high power bipolar transistor
Description
AI
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
100 V, 2 A PNP high power bipolar transistor
100 V, 2 A PNP high power bipolar transistor
| Part | Power - Max | DC Current Gain (hFE) (Min) | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Package Name | Current - Collector (Ic) (Max) | Mounting Type | Package / Case | Operating Temperature | Transistor Type | Vce Saturation (Max) | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.25 VA | 100 | 100 nA | 100 V | LFPAK56 Power-SO8 | 2 A | Surface Mount | SC-100 SOT-669 | 175 °C | NPN | 75 mV | 140 MHz |
Nexperia USA Inc. | 1.25 VA | 100 | 100 nA | 100 V | LFPAK56 Power-SO8 | 2 A | Surface Mount | SC-100 SOT-669 | 175 °C | PNP | 110 mV | 125 MHz |
 Nexperia USA Inc. | 25 W | 120 | 50 µA | 100 V | LFPAK56 Power-SO8 | 2 A | Surface Mount | SC-100 SOT-669 | 175 °C | NPN | 300 mV | 140 MHz |