Catalog
650V, 12A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 12A, THD, Silicon-carbide (SiC) SBD
650V, 12A, THD, Silicon-carbide (SiC) SBD
| Part | Capacitance | Technology | Current - Average Rectified (Io) | Package Name | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Package / Case | Current - Reverse Leakage | Mounting Type | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 600 pF | SiC (Silicon Carbide) Schottky | 12 A | TO-220FM | 1.5 V | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | 650 V | TO-220-2 Full Pack | 60 µA | Through Hole | 0 ns |