IPB65R110 Series
Manufacturer: INFINEON
Beta
⌘K
IPB65R110CFDA ·INCREASED SAFETY MARGIN DUE TO HIGHER BREAKDOWN VOLTAGE ·REDUCED EMI APPEARANCE AND EASY TO DESIGN IN ·BETTER LIGHT LOAD EFFICIENCY
| Part | Package / Case | FET Type | Input Capacitance (Ciss) (Max) | Grade | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Qualification | Technology | Vgs(th) (Max) | Gate Charge (Max) | Power Dissipation (Max) | Package Name | Mounting Type | Current - Continuous Drain (Id) (Tc) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 3240 pF 3240 pF | Automotive | 650 V | 10 V | -40 °C | 150 °C | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 4.5 V | 118 nC | 277.8 W | PG-TO263-3 | Surface Mount | 31.2 A | 110 mOhm |
 INFINEON | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 3240 pF 3240 pF | 650 V | 10 V | -55 °C | 150 °C | 20 V | MOSFET (Metal Oxide) | 4.5 V | 118 nC | 277.8 W | PG-TO263-3 | Surface Mount | 31.2 A | 110 mOhm |