DIODE GEN PURP 600V 30A DIE
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Reverse Leakage @ Vr | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Mounting Type | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Speed | Speed | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.6 V | 27 µA | Die | -40 °C | 175 ░C | Die | Surface Mount | 30 A | 600 V | Standard | Standard Recovery >500ns | 200 mA | ||
Infineon Technologies | 27 µA | Die | -55 °C | 150 °C | Die | Surface Mount | 600 V | Standard | 200 mA 500 ns | 150 ns | 1.7 V | |||
Infineon Technologies | 1.6 V | 27 µA | Die | -40 °C | 175 ░C | Die | Surface Mount | 30 A | 600 V | Standard | Standard Recovery >500ns | 200 mA | ||
Infineon Technologies | 27 µA | Die | -55 °C | 150 °C | Sawn on foil | Surface Mount | 600 V | Standard | 200 mA 500 ns | 150 ns | 1.7 V | |||
Infineon Technologies | 1.6 V | 27 µA | Die | -40 °C | 175 ░C | Die | Surface Mount | 30 A | 600 V | Standard | Standard Recovery >500ns | 200 mA |