YQ20NL10SD Series

Trench MOS Structure, 100V, 20A, LPDL, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 20A, LPDL, Highly Efficient SBD

Part	Operating Temperature - Junction	Speed	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor YQ20NL10SDTL	150 ¯C	200 mA, 500 ns	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	70 µA	100 V	TO-263L	Schottky	Surface Mount	960 mV

Catalog

Trench MOS Structure, 100V, 20A, LPDL, Highly Efficient SBD

Key Features

• High reliability, Power mold type, Low VFand low IR, Low capacitance

Description

The YQ20NL10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.