Beta
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30V 9.2A 19.4MΩ@10V,9.2A 2.5W 1 PIECE P-CHANNEL SOIC-8 MOSFETS ROHS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 38 nC | Surface Mount | 2.4 V | P-Channel | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 19.4 mOhm | 1110 pF | 9.2 A | 8-SO | 4.5 V 10 V | 30 V | -55 °C | 150 °C | 2.5 W |