MOSFET N-CH 525V 6A TO220AB
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | FET Type | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 90 W | 737 pF | 980 mOhm | 525 V | TO-220-3 | 6 A | MOSFET (Metal Oxide) | 34 nC | 150 °C | N-Channel | Through Hole | 30 V | 10 V | TO-220 | 4.5 V | |||||
STMicroelectronics | 90 W | 620 pF | 1.05 Ohm | 800 V | TO-220-3 | 6.5 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | 30 V | 10 V | TO-220 | 5 V | 18 nC | -55 °C | 150 °C | ||||
STMicroelectronics | 380 pF | 900 mOhm | 300 V | TO-220-3 | 5 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | 30 V | 10 V | TO-220 | 4.5 V | 13 nC | -55 °C | 150 °C | 50 W | ||||
STMicroelectronics | 45 W | 400 pF | 500 V | TO-220-3 | 5 A | MOSFET (Metal Oxide) | N-Channel | Through Hole | 25 V | 10 V | TO-220 | 4 V | 12 nC | -55 °C | 150 °C | 780 mOhm |