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STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 4.9 MOHM;
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 25 V | 2.2 W 36 W | 4.5 V 10 V | MOSFET (Metal Oxide) | DirectFET™ Isometric SQ | 17 A 68 A | 20 V | 4.9 mOhm | 18 nC | 150 °C | -40 °C | Surface Mount | 2.4 V | DIRECTFET™ SQ | N-Channel | 1570 pF |